Novel InSb-based quantum well transistors for ultra-high speed, low power logic applications

InSb-based quantum well field-effect transistors, with gate length down to 0.2 /spl mu/m, are fabricated for the first time. Hall measurements show that room temperature electron mobilities over 30,000 cm /sup 2/V/sup -1/s/sup -1/ are achieved with a sheet carrier density over 1/spl times/10/sup 12/ cm/sup -2/ in a modulation doped InSb quantum well with Al/sub x/In/sub 1-x/Sb barrier layers. Devices with 0.2 /spl mu/m gate length and 20% Al barrier exhibit DC transconductance of 625 /spl mu/S//spl mu/m and f/sub T/ of 150 GHz at V/sub DS/ =0.5V. 0.2 /spl mu/m devices fabricated on 30% Al barrier material show DC transconductance of 920 /spl mu/S//spl mu/m at V/sub DS/ = 0.5 V. Benchmarking against state-of-the-art Si MOSFETs indicates that InSb QW transistors can achieve equivalent high speed performance with 5-10 times lower dynamic power dissipation and therefore are a promising device technology to complement scaled silicon-based devices for very low power, ultra-high speed logic applications.