Hot carrier reliability of a SiGe/Si hetero-interface in SiGe/Si-hetero-MOSFETs

The density of hetero-interface-traps in a SiGe/Si heterostructure is successfully measured using a newly established charge pumping technique in a SiGe-channel pMOSFET, without interference from the gate oxide interface traps, and a good correlation between the measured density of hetero-interface-traps and the low frequency noise level in drain current flowing in the SiGe-channel is obtained. Moreover, it is experimentally shown that hot carrier degradation occurs in the SiGe/Si heterostructure, and the density of traps generated is estimated using the new charge pumping technique. These results will enable new levels of improvement to the performance and reliability of strained-Si and SiGe devices.