Research of sector split-drain MAGFET (structure and model) based on standard 0.6um N-well CMOS technology

In this paper, a new structure of sector split-drain MAGFET, based on CSMC standard 0.6 /spl mu/m N-well CMOS technology, is suggested and its model is also developed. The relationship of its relative sensitivity with device geometry parameters is obtained by computer simulation. A maximum sensor sensitivity of 3.77%/T is obtained in experimental results with an offset value lower than 0.27%. Improvement of sensitivity is attributed to the sector structure.