Multi-gate SOI MOSFET for 3D IC fabrication

In this paper, 71nm multi-gate, cross-gate and multi-fins SOI device be used for 3D CMOS IC were successfully fabricated on a bulk wafer simultaneously rather than on a commercial SOI wafer. The buried oxide of the SOI structure was directly formed by high temperature low pressure wet oxidation and for simplicity, the recrystallized film was formed by the recrystallization of amorphous silicon using high temperature annealing. Although the yield was not good, the cross-gate devices produced shows lower leakage current, better subthreshold factor, higher I/sub on//I/sub off/ ratio, and none kink effect compared to the corresponding multi-fin multi-gate devices.