Linear approximate methods of a far-end crosstalk simulation for a variable capacitance load

The semiconductor has a characteristic of nonlinear impedance that is varied by input voltage, frequency and temperature. The nonlinear characteristic complicates to solve the crosstalk problems. Then, from the static C-t characteristic of the diode, the nonlinear capacitance approximates a linear equation and the equation is substitute into the crosstalk equations. We solve the crosstalk equations with the approximate values, and compare the measurement values with the simulated values. As a result, we found that the optimum solution is obtained by using the linear approximate equation.