Design techniques for single-low-V/sub DD/ CMOS systems

In this paper, a new CMOS design scheme called the single-low-V/sub DD/ CMOS (SLVCMOS) is proposed. With this scheme, a CMOS design implemented in a multi-V/sub TH/ CMOS technology can be operated with a very low external supply voltage, say 0.5-V, with a sleep current at the level of only picoampere per gate. The key items for a single-chip SLVCMOS design include a sleepless mixed-V/sub TH/ flip-flop, a boosted sleeping clock signal, and three low-power hard blocks. Analysis shows that additional benefits of using the SLVCMOS include higher performance and lower power consumption in the active mode, smaller leakage current in the sleep mode, shorter wake-up time and reduced wake-up energy during the sleep-to-active transition, and a reduced number of sleep-control signals, saving precious routing resources and reducing the chip area. A dual-rail SLVCMOS cell library and two test chips, one 32-b RISC core and the other verifying the design of hard blocks, are designed and implemented to show the feasibility of the proposed design scheme and the design techniques.