Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO/sub 2/ interface

Experiments of phosphorus dose loss were performed to investigate fundamental kinetics of dopant segregation at the Si/SiO/sub 2/ interface. A new interface cluster model was proposed in addition to the conventional interface trap model. Simulations successfully fit the transient behavior of phosphorus dose loss over a wide temperature range. Segregation energies were extracted from detrapping/trapping ratios at different temperatures.