Impact of stoichiometry control in double junction memory on future scaling

We propose a new discrete trap memory with double tunnel junction where we can control trapped electron density by stoichiometry control of charge store part. This memory has less than 3 nm EOT tunnel oxide, and can retain a high trapped electron number density 10/sup 12/ cm/sup -2/, which is critical one for future scaling, for 10 years after low field w/e. It is concluded that stoichiometry control of charge store part in double junction memory is very promising method for future scaling.