A 100-W high-gain AlGaN/GaN HEMT power amplifier on a conductive n-SiC substrate for wireless base station applications

AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on a low-cost conductive n-SiC substrate. A single-chip GaN HEMT amplifier, operating at 60 V, achieved high CW output power of (101 W), a high linear gain (155 dB) and 50 % power-added efficiency at 2.14 GHz. This is the first report about the greater than 100 W power performance of the single-chip GaN HEMT that was grown on a conductive substrate.