Model for dielectric breakdown mechanism of HfAlO/sub x//SiO/sub 2/ stacked gate dielectrics dominated by the generated subordinate carrier injection

The dielectric breakdown mechanism of HfAlO/sub x//SiO/sub 2/ stacked gate dielectrics has been studied. Under the positive gate stress, validity of the anode hole injection model has been experimentally confirmed for the first time, while the cathode electron injection model is valid under the negative gate stress. Consolidating these mechanisms, the generated subordinate carrier injection (GSCI) model has been proposed for gate dielectrics including the conventional SiO/sub 2/.