Room-temperature demonstration of integrated silicon single-electron transistor circuits for current switching and analog pattern matching

This paper reports the first room-temperature (RT) operation of integrated single-electron transistor (SET) circuits. We fabricate silicon single-hole transistors (SHTs) with high controllability and obtain large Coulomb blockade (CB) oscillation with the peak-to-valley current ratio (PVCR) of over 10/sup 3/ at RT. A current switch using two SHTs integrated under a single gate is demonstrated at RT. We propose a novel application of SHTs, an ultra-compact analog pattern matching circuit. Its basic operation is demonstrated at RT using three SHTs fabricated on one chip, whose CB peak positions and currents are properly controlled by hole injection into nanocrystals embedded in the gate oxide of SHTs.