The method for integrating FBAR with circuitry on CMOS chip

A method is described to integrate a 3/spl times/2 ladder type film bulk acoustic wave (FBAR) filter on a CMOS chip. The modified Mason equivalent circuit model is used to simulate the FBAR characteristics. The filter is designed by the insertion loss method to meet the requirements. A low noise amplifier (LNA) has been designed and manufactured by the UMC 0.18 /spl mu/m process. By the use of a post CMOS process, the FBAR filter structure can be realized on a CMOS chip. Finally, the mass loading frequency trimming method can adjust the center frequency of the FBAR. The feasibility of integration can be proved by this method.