Characteristics of a double-barrier-emitter triangular-barrier optoelectronic switch

In this study, a triangular-barrier and a double-barrier structure were integrated to form a bi-directional switching device. In the structure center of the triangular barrier, a delta-doped (/spl delta/-doped) quantum well was inserted to enhance the carrier accumulation. Owing to the resonant tunneling through the double barrier and avalanche multiplication in the reverse-biased junction, N-shaped and S-shaped negative-differential-resistance (NDR) phenomena would occur in the current-voltage (I-V) characteristics under normal and reverse operation modes, respectively.