High voltage Schottky barrier diodes in synthetic single crystal diamond

Recent results proved the possibility of obtaining synthetic single crystal diamond with good crystal quality and excellent consistency. High voltage p-type Schottky barrier diodes (SBDs) have been fabricated on diamond, using gold (Au) as the Schottky metal and boron as doping material. In this study, on-state and off-state experimental and simulated data are presented and excellent theory-experiment agreement is revealed. The usage of diamond SBDs as ultra violet (UV) photodetectors is also analysed. On-state and off-state simulations, for different optical beam power densities, have been carried out and the theoretical data are provided.