Inter-trap tunneling in SiO/sub 2/ films of hydrogen implanted n-Si/SiO/sub 2/ structures

Capacitance-voltage measurements at 77 and 300 K have shown that implantation of hydrogen ions with energy of 11 keV into the n-Si/SiO/sub 2/ structure generates defects in the 120 nm thick SiO/sub 2/ layer and at the Si/SiO/sub 2/ interface. In the accumulation mode tunnelling type conduction through the oxide is observed. It is shown that inter-trap tunnelling is responsible for this current.