I-V reverse characteristic instability of high voltage silicon PN junctions at high temperature

Typical experimental results are presented for silicon (Si) PN junctions with a potential reverse voltage higher than 1000 V, revealing reverse current-voltage (I-V) characteristic instability at temperature higher than 125/spl deg/C. High levels of the reverse current reached on behalf of the surface leakage current cause I-V characteristic instability accompanied by a looping effect when this is displayed by means of a curve tracer. For standard recovery silicon diodes stable I-V characteristics are possible up to 200/spl deg/C if enough reduction in the level of the reverse current is provided. For fast recovery high voltage junctions stable characteristics above 150/spl deg/C have not been found for commercial available devices. Although the surface current component is the secondary one for these diodes, it may have some contribution to characteristic instability.