Low-frequency noise of 90 nm nFETs: hot-carrier degradation and deuterium effect

We show that the low-frequency noise (LFN) of 90 nm nFETs can increase considerably due to hot-carrier stress. Measurements reveal noise degradation for both linear and saturation regions of operation. The use of deuterium processing retards the noise degradation and improves the noise lifetime by more than 20/spl times/.