A study of the fabrication of flip-chip bumps using dry-film photoresist process on 300 mm wafer

This work is to study the dry-film photoresist to form patterns for flip-chip bumps on 300 mm wafers. The so-called "double-deck metal seed layer" process was also applied in this study by using sputtered 1000 /spl Aring/ Ti (Titanium) and 5000 /spl Aring/ Cu (Copper) metal layers. By welding the metal and solder electroplating technology on the chip of the integrated circuits, Cu/Ni/solder alloy fill up hole under bumps metallization after solder re-flowing at 220/spl deg/C. This research optimizes the parameters of the dry-film photoresist, lithography technology, metal sputtering technology and metal electroplating technology.