The tunneling field effect transistor (TFET) used in a single-event-upset (SEU) insensitive 6 transistor SRAM cell in ultra-low voltage applications

This paper discusses the 6 transistor SRAM cell based on the complementary tunneling field effect transistors (TFET). The low voltage characteristics of the cell are presented. The static noise margin (SNM) is used to compare the TFET cell with the standard CMOS memory cell. Furthermore the sensitivity versus single-event-upset (SEU) caused by radiation is investigated.