A novel single electron SRAM architecture

A novel single electron transistor (SET) based architecture is proposed for SRAM application. The proposed architecture is composed of two cross-connected SETs and exhibits negative differential resistance (NDR) characteristics, which is exploited to obtain unique tunable hysteresis effects and Schmitt trigger like operation. As no capacitor is used for information storage and SETs offer nano scale feature size, proposed architecture promises to be attractive candidate for highly dense SRAM structure.