Long-range ordered self-assembled InAs quantum dots on [110] GaAs grown with molecular beam epitaxy

We report on a new approach for positioning of self-assembled InAs quantum dots on [110] GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces we have successfully fabricated arrays of long-range ordered InAs quantum dots. Atomic force microscopy measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot microphotoluminescence investigations confirm the high optical quality of the fabricated quantum dots.