Growth of ZnSe nanowires by molecular beam epitaxy

We have grown ZnSe nanowires on Au-coated SiO/sub 2/ by molecular beam epitaxy. Data are reported for structures grown at 450 and 550/spl deg/C. High resolution electron microscopy shows that the lower growth temperature gives rise to a higher density of high-quality nanostructures and that nanowires, nanobelts and nanosaws are all present in our samples. ZnSe nanostructures do not grow on the non-coated substrate. Photoluminescence shows a blue component in samples grown at lower temperature.