Triple high /spl kappa/ stacks (Al/sub 2/O/sub 3//HfO/sub 2//Al/sub 2/O/sub 3/) with high pressure (10 atm) H/sub 2/ and D/sub 2/ annealing for SONOS type flash memory device applications

In this article, we report on electrical and memory properties of triple high-/spl kappa/ stacks (Al/sub 2/O/sub 3//HfO/sub 2//Al/sub 2/O/sub 3/) with high pressure (10 atm) H/sub 2/ and D/sub 2/ annealing for SONOS type flash memory device applications. For 3 nm-thick Al/sub 2/O/sub 3//10 nm-thick HfO/sub 2//10 nm-thick Al/sub 2/O/sub 3/ (AHA) stack, memory window (M.W.) of 1.4 V at programming/erasing (P/E) condition of /spl plusmn/6 V/1-2 msec was obtained. In addition, high pressure D/sub 2/ annealed sample shows improved retention characteristics such as large memory window, and low slope per decade with retention time.