History-effect-conscious SPICE model extraction for PD-SOI technology

This work presents explicit fitting guidelines for AC and DC characteristics, specifically focused on accurate modeling of the history effects in the PD-SOI CMOS circuits. The body potential of the PD-SOI device is primarily determined by the diode current, gate-body current, impact ionization current, junction capacitance, and gate-body capacitance. This paper also discusses artifacts associated with the parasitic currents and highly-resistive thin-body of the PD-SOI.