Strained-Si/SiGe-on-insulator wafers fabricated by Ge-condensation process

This work presents successful fabrication of uniform 150 and 200 mm strained-Si/SiGe-on-insulator wafers by using the Ge-condensation process and discusses some integration issues. Epitaxial growth of both SiGe and Si films was performed at 600 /spl deg/C in 1 Pa by a mixture of SiH/sub 4/, GeH/sub 4/, and H/sub 2/ using LPCVD system with vertical reactor type. CMOS devices were also fabricated to examine the material quality of the 150 and 200 mm SSOI wafers and commercially available SOI. Poly-Si gate CMOS process with 10 nm thick gate oxide was employed in this work.