Back-floating gate non-volatile memory

Conventional floating-gate flash memory has scaling difficulties due to nonscaling of gate-insulator stack and inefficient hot carrier injection processes at sub-50 nm gate dimensions. Back-floating gate (BFG) flash memory structure overcomes these limitations by decoupling read and write operation and independent positioning and/or sizing of the storage element (back-floating gate) under the silicon channel. We report here the first realization and operation of back-floating gate memory together with its possible array implementation.