On the V/sub th/ controllability for 4-terminal double-gate MOSFETs

We investigate the V/sub th/ controllability of the 4-terminal DG-MOSFET (4T-DGFET). We presented a simple and comprehensible model for the 4T-DGFET and made clear the V/sub th/ controllability in connection with the initial V/sub th/ in the DG-mode. These results discussed here are useful for the 4T-DGFET device and circuit design.