Fabrication of high quality patterned SOI materials by optimized low-dose SIMOX

High quality patterned SOI materials fabricated by optimized low-dose and low-energy SIMOX technique are reported. XTEM results reveal that the formed patterned SOI materials have very flat surface and low defect density transition between the bulk and SOI regions. These excellent quality patterned SOI materials are desirable substrates for system-on-a-chip (SOC) applications.