Degradation of body factor (/spl gamma/) of single gate fully depleted SOI MOSFETs due to short channel effects

In this article, the expression of effective back gate potential for short channel single gate FD SOI MOSFETs is investigated. The expression of /spl gamma/ is obtained analytically for the first time, and it is shown that /spl gamma/ degrades due to the channel effect in FD SOI MOSFETs. The relationship between S factor and /spl gamma/ in short channel single gate FD SOI MOSFET is also clarified.