Fabrication of strained Si/strained SiGe/strained Si heterostructures on insulator by a bond and etch-back technique

This paper discusses the fabrication of strained Si/strained SiGe/strained Si heterostructures on insulator by a bond and etch-back technique with total thickness of 25 nm. We have shown that the etch back process does not roughen the surface. By secondary ion mass spectroscopy (SIMS), we have shown a reduction in peak Ge fraction from the as grown 55% to 50% as a result of thermal processing.