A 0.9-V 1T1C SBT-based embedded nonvolatile FeRAM with a reference voltage scheme and multilayer shielded bit-line structure

A one-transistor one-capacitor (1T1C) SBT-based embedded nonvolatile FeRAM, which operates at a low voltage of 0.9 V even after 10 years of imprint degradation, was fabricated using a 0.18-/spl mu/m process. The low voltage operation and high reliability characteristics have been achieved using a novel reference voltage scheme and a multilayer shielded bit-line structure.