A 622 Mb/s monolithically integrated InGaAs/InP four-channel p-i-n FET receiver array

The authors describe the sensitivity and crosstalk characteristics of a long-wavelength monolithically integrated four-channel photoreceiver array. This receiver consists of 4 p-i-n PDs, 24 JFETs, and 28 level-shift diodes. The device is fabricated using MOVPE-grown crystals and a Be ion implantation technique. The receiver chip demonstrates a sensitivity of between -30.6 and -31.4 dBm, and crosstalk below -20 dB over its operating frequency range. Sensitivity deterioration due to crosstalk is demonstrated and is shown to be a critical factor in system performance. The crosstalk is mainly due to parasitic inductances on the external power supply circuits.<
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