Optical transitions in strained In/sub 0.53/Ga/sub 0.47/As/In/sub 1-x/Ga/sub x/As quantum wells

Experimental and theoretical characterization of a series of strained InGaAs/InGaAs quantum well heterostructures is presented. Measurements of X-ray diffraction on calibrated pairs of samples are in excellent agreement with simulated X-ray spectra and provide precise values for compositions and layer thicknesses. With these parameters, the authors have calculated the light- and heavy-hole to electron transition wavelengths, taking into account quantum confinement effects and the influence of strain on the strained-layer bandgap and on the band offset at the lattice-mismatched heterointerface. These calculated bandgaps are in good agreement with the measured room temperature photoluminescence spectra.<
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