Room temperature pulsed operation of 1.5 mu m GaInAsP/InP vertical-cavity surface-emitting laser

Room-temperature pulsed operation of a GaInAsP/InP vertical-cavity surface-emitting laser diode (VCSELD) with an emission wavelength near 1.55 mu m is reported. A double heterostructure with a 34-pair GaInAsP ( lambda /sub g/=1.4 mu m)/InP distributed Bragg reflector (DBR) was grown by metalorganic chemical vapor deposition (MOCVD). The measured reflectivity of the semiconductor DBR is over 97% and threshold current is 260 mA for a 40- mu m phi device with a 0.88- mu m-thick active layer. Threshold current density is as low as 21 kA/cm/sup 2/ at room temperature.<
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