High-power, high-brightness GaInSb/AlGaAsSb quantum-well diode-lasers emitting at 1.9 /spl mu/m

This study presents results on GaSb-based tapered diode lasers with an emission wavelength of 1.91 /spl mu/m at 20/spl deg/C. The active layer of the samples consists of three compressively strained 10 nm wide Ga/sub 0.78/In/sub 0.22/Sb-QWs, separated by 20 nm wide lattice matched Al/sub 0.29/Ga/sub 0.71/As/sub 0.02/Sb/sub 0.98/ barriers. The QW region is surrounded by 400 nm wide Al/sub 0.29/Ga/sub 0.71/As/sub 0.02/Sb/sub 0.98/ separate confinement layers, followed by 2 /spl mu/m thick Al/sub 0.84/Ga/sub 0.16/As/sub 0.06/Sb/sub 0.94/ n-doped and p-doped cladding layers. The lateral design is composed of a ridge-waveguide section followed by a trapezoidal amplifier. The rear facet is HR-coated with a reflectivity of 97% while the output facet was AR-coated with a reflectivity of /spl sim/1%. The devices are finally mounted junction side down on copper heat sinks.