800 V 4H-SiC RESURF-type lateral JFETs

This letter proposes to show that a lateral switching device has some unique advantages, including little dependence on substrate defects, low on-resistance, and a simple design of heat radiation. A reduced surface field (RESURF) type SiC-JFET is one of candidate devices for an electric or hybrid automobile application. Small RESURF-type SiC-JFETs with gate width of 200 μm and a blocking voltage of 800 V were fabricated. The fabrication and characteristics of the devices are described and discussed.