Pure CMOS one-time programmable memory using gate-ox anti-fuse

A pure CMOS one-time programmable (PCOP) memory is developed as electrically programmable nonvolatile memory for general purposes. The memory cell consists of a thin-oxide PMOS transistor, a thick-oxide NMOS barrier transistor and a selection transistor. It is programmed with the dielectric breakdown of the thin gate oxide. A high voltage generator is built-in so as to be programmable after packaging.