Si-Ge power amplifier for WCDMA handheld applications

A monolithic radiofrequency power amplifier for WCDMA handheld applications has been fabricated in a 0.35 /spl mu/m, 40 GHz f/sub T/, volume production Si-Ge bipolar technology. The process technology features a doped ground connection for on-chip devices to improve the overall performance. At 3.3 V supply voltage saturated output power of 29 dBm with a PAE of 50 % has been achieved; simultaneously P/sub -1dB/ is 28 dBm at 1.95 GHz and the small signal gain is 32 dB.