"Microwave memory effect" of activated water and aqueous KOH solution

A "microwave memory effect" of the microwave activation of water and aqueous fluids has been discovered and studied. It has been found that microwave irradiation caused significant changes of the water structure in comparison to non-irradiated. The outline of the mechanism of the observed effect has been discussed. It has been assumed that microwave irradiation broke the hydrogen bond in a cluster-like water structure. As an effect, free water molecules, as well as hydroxyl ions, are generated. The technical application of the described effect - a new method of fast wet orientation dependent etching of silicon - has been studied. The potential dangerous consequences of the "microwave memory effect" have been discussed as well as technical applications in chemistry and microsystems techniques.