Universal integrated PIN photodetector

The universal PIN photodetector being realisable in CMOS and BiCMOS technology consists of a common cathode and finger anodes embedded in an intrinsic environment, for fast photogenerated-charge-carrier drift. This finger-anode structure, with rise times below 1 ns, and high responsivity in a wavelength range from 400 nm to 850 nm, permits applications: (i) as a two-anode correlation sensor for optical distance measurements and integrated 3D cameras; and (ii) as a photodiode for optical storage systems CD-ROMs as well as red and blue laser DVDs.