Pulse power supply using an IGBT switch stack for plasma source ion implantation

A compact pulse power supply using an IGBT switch stack for plasma source ion implantation is proposed in this study. The pulse power supply is composed of a capacitor charging part and high voltage (H/V) pulse generation part. The H/V pulse generation part uses six switching block and a step-up pulse transformer. Each switching block consists of a diode stack, an IGBT stack, and a high voltage capacitor. It can generate the pulse voltages with the following parameters: voltage: up to 60 kV, rising time: 0.5 /spl mu/s, falling time: 2 /spl mu/s, pulse width: up to 5 /spl mu/s, pulse repetition rate: 2,000 pps. The proposed pulse power supply uses only semiconductor switches made of IGBTs with only two active drivers. Hence, the system is compact, and has long lifetime and high.