High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates

Laser action at optical excitation was obtained over the temperature range up to 360 /spl deg/C in the InGaN/GaN multiple quantum well (MQW) heterostructures grown by MOVPE on (111) Si substrates. An increasing number of the strain-reducing layer stacks promoted a considerable reduction of laser threshold down to 30 kW/cm/sup 2/. The maximal values of quantum efficiency, pulse energy and power of lasers were /spl eta//sub max/ = 5%, E/sub max/ = 140 nJ, P/sub max/ = 30 W, respectively. It is shown that the temperature behavior of the laser threshold is strongly correlated with characteristics of spontaneous emission at excitation level equal to the laser threshold.