The gain and carrier density in semiconductor lasers under steady-state and transient conditions

The carrier distribution functions in a semiconductor crystal in the presence of a strong optical field are obtained. These are used to derive expressions for the gain dependence on the carrier density and on the optical intensity-the gain suppression effect. A general expression for high-order nonlinear gain coefficients is obtained. This formalism is used to describe the carrier and power dynamics in semiconductor lasers above and below threshold in the static and transient regimes.<
>