Defect structure of high resistive CdTe: in prepared by vertical gradient freeze method

High resistive and photosensitive CdTe doped with In aimed for fabrication of X- and gamma-ray detectors was produced by vertical gradient freeze method. A complex investigation of defects and compensation by a number of optical and photoelectrical mapping methods was performed. A model of energy levels dominating the recombination processes in the material was elaborated, where the role of In, and related complexes as well as native defects (Cd vacancy and its competes) is discussed.