Numerical and experimental study of localized lifetime control LIGBT by low energy He ions implantation

A high speed LIGBT (lateral insulated gate bipolar transistor) with localized lifetime control by using high dose and low energy helium implantation (LC-IGBT) is proposed. Compared with conventional LIGBTs, particle irradiation results show that the trade-off relationship between the turn-off time and forward voltage drops has been improved. At the same time, the forward voltage drops and turn-off time of such devices have been researched, in the case of the localized lifetime control region placed near the p/sup +/-n junction, even in the p/sup +/ anode. The results show, for the first time, that helium ions, which stop in the p/sup +/ anode, also contribute to increasing the forward voltage drops and reducing the turn-off time.