B/sub 2/H/sub 6/ plasma doping with "in-situ He pre-amorphization"

Plasma doping process to reduce sheet resistance (Rs) keeping shallow junction depth (Xj) was demonstrated. In-situ Helium pre-amorphization (He-PA) was introduced to plasma doping (PD) method. High dose and ultra-shallow as-doped profiles were optimized by adjusting B/sub 2/H/sub 6/ PD conditions. The optical absorption rate in the amorphous layer and Xj was controlled by the He-PA conditions. Advantage of these new techniques to form ultra-shallow p/sup +/-n junction were verified by flash lamp annealing (FLA) and laser annealing (All Solid-State Green Laser Annealing: ASLA) for the first time. Excellent results on Rs, Xj and abruptness of profiles were obtained.