Novel fabrication process to realize ultra-thin (EOT = 0.7nm) and ultra-low leakage SiON gate dielectrics

We achieved 0.73 nm EOT, 88 A/cm/sup 2/ J/sub g/, and 92% G/sub m/ of that for SiO/sub 2/ by just oxidation of SiN films. In addition, we achieved further improvement of EOT-J/sub g/ characteristics by re-nitridation process with minimum degradation of G/sub m/. EOT of 0.70 nm and J/sub g/ as 95 A/cm/sup 2/ is realized with superior suppression of boron penetration (/spl Delta/V/sub th/=0.04 V).