On the defect generation and low voltage extrapolation of Q/sub BD/ in SiO/sub 2//HfO/sub 2/ stacks

The purpose of this paper is to demonstrate that at least a part of the initially present traps is indistinguishable from the electrically generated traps favouring the first interpretation. With this interpretation, we observe on our stack a trap generation threshold below which no degradation occurs, resulting in a virtually infinite Q/sub BD/ at low voltage. This optimistic result is, however, countered by the fact that the pre-stress traps dominate I/sub G/ at low V/sub G/ and limit the yield.