14 MeV neutron-induced SEU in SRAM devices

In this paper we explore the sensitivity of commercial static random-access memory devices to 14 MeV neutrons. The effects on bulk technologies are investigated as a function of supply voltage and angle of incidence. Monte Carlo simulations of nuclear interactions with device architecture are used for comparison with experimental data. This simulation analysis allows us to determine the key parameters of the device sensitivity as a function of the technology integration.