Temperature dependence of single-event transient current induced by heavy-ion microbeam on p/sup +//n/n/sup +/ epilayer junctions

The temperature dependence of the single event transient current induced by using 15-MeV oxygen heavy-ion microbeam strike on p/sup +//n/n/sup +/ epilayer junction diodes has been experimentally investigated over a temperature range of approximately 290 to 450 K. It was found that the heavy-ion induced single event transient currents show different behavior for different temperatures while the collected charges almost keep constant over the temperature range considered.